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- Overview
The Samsung MZ-VAP4T0BW 4TB is a single-sided M.2 2280 NVMe PCIe Gen 5.0 x4 solid-state drive manufactured by Samsung as part of their 9100 PRO Series. This high-capacity drive features 4 GB LPDDR4X cache, Samsung V-NAND TLC, delivers sequential read and write speeds up to 14,800 MB/s and 13,400 MB/s with random performance up to 2,200,000 IOPS read and 2,600,000 IOPS write, and offers 2,400 TB Written endurance with 256-bit AES hardware encryption.
Specifications
Model Number: MZ-VAP4T0BW
Brand: Samsung
Alt Part Number(s): MZ-VAP4T0BW
Product Type: Solid State Drive
Technical Description
Brand: Samsung
Model: MZ-VAP4T0BW
Series: 9100 PRO
Capacity: 4 TB
Interface: PCIe Gen 5.0 x4
Protocol: NVMe 2.0 standard
Form Factor: Single-sided M.2 2280
Flash Type: Samsung V-NAND TLC
Read Speed: Up to 14,800 MB/s
Write Speed: Up to 13,400 MB/s
Random Read: 2,200,000 IOPS
Random Write: 2,600,000 IOPS
DRAM Cache: 4 GB LPDDR4X buffer
Endurance: 2,400 TB Written
Security: 256-bit AES hardware encryption
Reliability: 1.5 million hours MTBF
Product information, pricing, availability, images or discounts are subject to change without notice and may not always reflect the most current details. In the event of pricing or availability discrepancies, we reserve the right to cancel or adjust orders. Customers will be notified and may choose to proceed or cancel.
