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- Overview
The Samsung MZ-VAP1T0BW 1TB is an M.2 2280 NVMe PCIe 5.0 x4 solid-state drive manufactured by Samsung as part of their 9100 PRO Series. This cutting-edge drive features a Samsung Presto S4LY027 5-core controller, 236-layer TLC V-NAND, 1 GB low-power DDR4X cache, delivers random read and write speeds up to 1,850,000 and 2,600,000 IOPS, and supports AES 256-bit hardware encryption with 600 TB Written endurance.
Specifications
Model Number: MZ-VAP1T0BW
Brand: Samsung
Alt Part Number(s): MZ-VAP1T0BW
Product Type: Solid State Drive
Technical Description
Brand: Samsung
Model: MZ-VAP1T0BW
Series: 9100 PRO
Interface: PCIe 5.0 x4; NVMe 2.0
Form Factor: M.2 2280 (Single-Sided)
Total Capacity: 1 TB
Onboard Controller: Samsung Presto S4LY027 (5-Core)
NAND Flash Memory: Samsung 236-Layer TLC V-NAND (V8)
DRAM Cache Size: 1 GB Low-Power DDR4X
Random Read Speed: Up to 1,850,000 IOPS
Random Write Speed: Up to 2,600,000 IOPS
Endurance Rating: 600 TB Written
Hardware Encryption: AES 256-bit; TCG/Opal v2.0
Power Consumption: 7.6W Read / 7.2W Write (Average)
Product information, pricing, availability, images or discounts are subject to change without notice and may not always reflect the most current details. In the event of pricing or availability discrepancies, we reserve the right to cancel or adjust orders. Customers will be notified and may choose to proceed or cancel.
